ret y rt - low power loss, high efficiency - guardring for overvoltage protection - high surge current capability - halogen-free according to iec 61249-2-21 definition v rrm 35 45 50 60 90 100 150 200 v v rms 24 31 35 42 63 70 105 140 v v dc 35 45 50 60 90 100 150 200 v i f(av) a i rrm a 0.15 dv/dt v/us r jc o c/w t j o c t stg o c document number ds_d1308023 version:a13 10000 molding compound, ul flammability classification rating 94v-0 base p/n with suffix "g" on packing code - halogen-free, rohs compliant MBR2035CT-Y thru mbr20200ct-y taiwan semiconductor dual common cathode schottk y rectifier feat u res 0.99 - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec m ech an i cal dat a to-220ab case to-220ab terminal matte tin plated leads, solderable per jesd22-b106 meet jesd 201 class 1a whisker test polarity as marked weight 1.88 gram (approximately) m ax i m u m rat i n gs an d elect ri cal ch aract erst i cs (t a =25 unless otherwise noted) param et er sy m bol m br 2 0 3 5 ct -y m br 2 0 4 5 ct -y m br 2 0 5 0 ct -y m br 2 0 6 0 ct -y m br 2 0 9 0 ct -y m br 2 0 1 0 0 ct -y m br 2 0 1 5 0 ct -y u n i t maximum repetitive peak reverse voltage maximum rms voltage maximum dc blocking voltage peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load i fsm a peak repetitive reverse surge current (note 1) 1 mounting torque 5 in-lbs maximum maximum average forward rectified current peak repetitive forward current (rated vr, square wave, 20khz) i frm a maximum instantaneous forward voltage (note 2) if=10a, ta=25 if=10a, ta=125 if=20a, ta=25 if=20a, ta=125 v f v - 0.80 0.85 0.57 0.84 0.95 0.95 0.72 0.85 0.85 voltage rate of change (rated v r ) typical thermal resistance 1.0 operating junction temperature range maximum reverse current @ rated vr t a =25 t a =125 i r ma 15 storage temperature range note 1 tp = 2.0 s, 1.0khz note 2 pulse test with pw=300u sec, 1% duty cycle m br 2 0 2 0 0 ct -y 2020 150 0.5 mbr 20200 ct 0.871.23 1.10 0.1 2.0 - 55 to + 150 10 5 0.70 0.75 - 55 to + 150 marking code mbr2035 ct mbr2045 ct mbr2050 ct mbr2060 ct mbr2090 ct mbr 20100 ct mbr 20150 ct downloaded from: http:///
part n o. part n o. mbr2060ct-y mbr2060ct-y (ta=25 unless otherwise noted) document number ds_d1308023 version:a13 mbr20xxct-y (note 1) suffix "g" c0 MBR2035CT-Y thru mbr20200ct-y taiwan semiconductor pack i n g code green com pou n d code pack age pack i n g to-220ab g green compound note 1: "xx" defines voltage from 35v (MBR2035CT-Y) to 200v (mbr20200ct-y) preferred p/n pack i n g code green com pou n d code descri pt i on 50 / tube orderi n g i n form at i on ex am ple rat i n gs an d ch aract eri st i cs cu rv es mbr2060ct-y c0 c0 mbr2060ct-y c0g c0 0 4 8 12 16 20 24 0 50 100 150 average forward a current (a) case temperature ( o c) fig.1- forward current derating curve resistive or inductiveload with heatsink 0 25 50 75 100 125 150 1 10 100 peak forward surge current (a) number of cycles at 60 hz fig. 2- maximum non-repetitive forward surge current per leg 8.3ms single half sine wave jedec method 0.001 0.01 0.1 1 10 100 0 20 40 60 80 100 120 140 instantaneous reverse current (ma) percent of rated peak reverse voltage (%) fig. 4- typical reverse characteristics per leg ta=75 ta=125 ta=25 MBR2035CT-Y-2045ct-y mbr2050ct-y-20100ct-y mbr20150ct-y-20200ct-y 0.01 0.1 1 10 100 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 instantaneous forward current (a) forward voltage (v) fig. 3- typical instantaneous forward characteristics per leg ta=125 pulse width=300us 1% duty cycle ta=25 MBR2035CT-Y-2045ct-y mbr2050ct-y-2060ct-y mbr20100ct-y mbr20150ct-y-200ct-y downloaded from: http:///
min max min max a - 10.50 - 0.413 b 2.62 3.44 0.103 0.135 c 2.80 4.20 0.110 0.165 d 0.68 0.94 0.027 0.037 e 3.54 4.00 0.139 0.157 f 14.60 16.00 0.575 0.630 g 13.19 14.79 0.519 0.582 h 2.41 2.67 0.095 0.105 i 4.42 4.76 0.174 0.187 j 1.14 1.40 0.045 0.055 k 5.84 6.86 0.230 0.270 l 2.20 2.80 0.087 0.110 m 0.35 0.64 0.014 0.025 p/n = marking code g = green compound yww = date code f = factory code document number ds_d1308023 version:a13 m ark i n g di agram MBR2035CT-Y thru mbr20200ct-y taiwan semiconductor pack age ou t li n e di m en si on s dim. unit(mm) unit(inch) 100 1000 10000 0.1 1 10 100 junction capacitance (pf) a reverse voltage (v) fig. 5- typical junction capacitance per leg MBR2035CT-Y-2045ct-y mbr2050ct-y-20200ct-y f=1.0mhz vsig=50mvp-p 0.1 1 10 100 0.01 0.1 1 10 100 transient thermal impedance ( /w) t-pulse duration. (sec) fig. 6- typical transient thermal impedance per leg downloaded from: http:///
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